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  kbpc5000fp ... kbpc5012fp kbpc5000fp ... kbpc5012fp silicon-bridge-rectifiers silizium-brckengleichrichter version 2014-06-24 dimensions - ma?e [mm] nominal current nennstrom 50 a alternating input voltage eingangswechselspannung 35...800 v plastic case with alu bottom plastikgeh?use mit alu-boden 28.6 x 28.6 x 7.3 [mm] terminals anschlsse fast-on 1 ) weight approx. gewicht ca. 17 g compound has classification ul94v-0 vergussmasse nach ul94v-0 klassifiziert standard packaging bulk standard lieferform lose im karton recognized product C underwriters laboratories inc.? file e175067 anerkanntes produkt C underwriters laboratories inc.? nr. e175067 maximum ratings grenzwerte type typ max. alternating input voltage max. eingangswechselspannung v vrms [v] repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] 2 ) kbpc5000fp 35 50 kbpc5001fp 70 100 kbpc5002fp 140 200 kbpc5004fp 280 400 kbpc5006fp 420 600 kbpc5008fp 560 800 kbpc5010fp 700 1000 kbpc5012fp 800 1200 1 solderable per mil-std-202, method 208, terminal temperature not exceeding 260c l?tbar gem?? mil-std-202, methode 208, temperatur der anschlussdr?hte nicht h?her als 260c 2 valid per diode C gltig pro diode ? diotec semiconductor ag http://www.diotec.com/ 1 1 4 . 3 0 . 5 28.6 0.2 21.6 1 0 . 8 6 . 3 ? 5.2 18.1 0.5 7 . 9 1 6 . 6 0 . 5 16.6 0.5 6.7 + 7.3 + t y p e = =
kbpc5000fp ... kbpc5012fp repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 90 a 1 ) peak forward surge current 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 400/450 a rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 800 a 2 s operating junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+150c characteristics kennwerte max. current with cooling fin 300 cm2 dauergrenzstrom mit khlblech 300 cm 2 t a = 50c r-load c-load i fav i fav 50 a 46 a forward voltage C durchlass-spannung t j = 25c i f = 25 a v f < 1.1 v 2 ) leakage current C sperrstrom t j = 25c v r = v rrm i r < 10 a isolation voltage terminals to case isolationsspannung anschlsse zum geh?use v iso > 2500 v thermal resistance junction to case w?rmewiderstand sperrschicht C geh?use r thc < 1.2 k/w admissible torque for mounting zul?ssiges anzugsdrehmoment 10-32 unf m5 18 10% lb.in. 2 10% nm 1 valid, if the temperature of the case is kept to t c = 120c C gltig, wenn die geh?usetemperatur auf t c = 120c gehalten wird 2 valid per diode C gltig pro diode 2 http://www.diotec.com/ ? diotec semiconductor ag rated forward current versus ambient temperature ) zul. richtstrom in abh. von der umgebungstemp. ) 1 1 i fav [%] 120 100 80 60 40 20 0 [c] t a 150 100 50 0 forward characteristics (typical values) durchlasskennlinien (typische werte) 0.4 v f 0.8 1.0 1.2 1.4 [v] 1.8 10 10 10 1 10 3 2 -1 [a] i f t = 25c j t = 125c j 400a-(25a-1,1v)


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